2N3906

2N3906 / M M BT3906 / PZT3906 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2N3906 PZT3906 MMBT3906 Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C C B E TO-92 B C C SOT-223 E C B E SOT-23 Mark: 2A  1997 Fairchild Semiconductor Corporation 2N3906 / M M BT3906 / PZT3906 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS (except MMPQ3906) *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V IBL Base Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA ICEX Collector Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA hFE DC Current Gain * IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V 60 80 100 60 30 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.25 0.4 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.65 0.85 0.95 V V fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, f = 100 MHz 250 MHz Cobo Output Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.5 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 10.0 pF NF Noise Figure (except MMPQ3906) IC = 100 µA, VCE = 5.0 V, RS =1.0kΩ, f=10 Hz to 15.7 kHz 4.0 dB td Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns ts Storage Time VCC = 3.0 V, IC = 10mA 225 ns tf Fall Time IB1 = IB2 = 1.0 mA 75 ns PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10) PNP General Purpose Amplifier (continued) 2N3906 / M M BT3906 / PZT3906 Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N3906 *PZT3906 PD Total Device Dissipation Derate above 25°C 625 5.0 1,000 8.0 mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 125 °C/W Symbol Characteristic Max Units **MMBT3906 MMPQ3906 PD Total Device Dissipation Derate above 25°C 350 2.8 1,000 8.0 mW mW/°C RθJA Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 357 125 240 °C/W °C/W °C/W PNP General Purpose Amplifier (continued) Typical Characteristics Base Emitter ON Voltage vs Collector Current P 66 0.1 1 10 25 0 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (mA)V - B AS E EM IT TE R O N VO LT AG E (V ) C BE O N V = 1VCE 25 °C - 40 ºC 125 ºC Typical Pulsed Current Gain vs Collector Current 0.1 0.2 0.5 1 2 5 10 20 50 100 50 100 150 200 250 I - COLLECTOR CURRENT (mA)h - TY PI CA L PU LS ED CU RR EN T G AI N C FE 125 °C 25 °C - 40 °C Vce = 1V *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Base-Emitter Saturation Voltage vs Collector Current P 66 1 10 100 200 0 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (mA) V - BA SE EM IT TE R VO LT AG E (V ) C B ES AT β = 10 25 °C - 40 ºC 125 ºC Collector-Emitter Saturation Voltage vs Collector Current 1 10 100 200 0 0.05 0.1 0.15 0.2 0.25 0.3 I - COLLECTOR CURRENT (mA)V - CO LL EC TO R EM IT TE R V O LT AG E (V ) CC ES AT 25 °C - 40 ºC 125 ºC β = 10 2N3906 / M M BT3906 / PZT3906 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Collector-Cutoff Current vs. Ambient Temperature 25 50 75 100 125 0.01 0.1 1 10 100 T - AMBIENT TEMPERATURE ( C) I - CO LL EC TO R CU RR EN T (nA ) A CB O º V = 25VCB Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 0.1 1 10 0 2 4 6 8 10 REVERSE BIAS VOLTAGE (V) CA PA CI TA N CE (p F) C obo C ibo Noise Figure vs Frequency 0.1 1 10 100 0 1 2 3 4 5 6 f - FREQUENCY (kHz) N F - NO IS E FI G UR E (d B) I = 100 µA, R = 200ΩC V = 5.0VCE S I = 100 µA, R = 2.0 kΩC S I = 1.0 mA, R = 200ΩC S kΩ Noise Figure vs Source Resistance 0.1 1 10 100 0 2 4 6 8 10 12 R - SOURCE RESISTANCE ( ) N F - NO IS E FI G UR E (d B) I = 100 µAC V = 5.0V f = 1.0 kHz CE I = 1.0 mAC S Switching Times vs Collector Current 1 10 100 1 10 100 500 I - COLLECTOR CURRENT (mA) TI M E (n S) I = I = t r t s B1 C B2 I c 10 t f t d Turn On and Turn Off Times vs Collector Current 1 10 100 1 10 100 500 I - COLLECTOR CURRENT (mA) TI M E (nS ) I = I = t off B1 C B2 I c 10 t on V = 0.5VBE(OFF) t I = on t off B1 I c 10 2N3906 / M M BT3906 / PZT3906 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 0 0.25 0.5 0.75 1 TEMPERATURE ( C) P - PO W ER DI SS IP AT IO N (W ) D o SOT-223 SOT-23 TO-92 TRADEMARKS ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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