IRF3205

IRF3205 HEXFET® Power MOSFET 01/25/01 Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance www.irf.com 1 VDSS = 55V RDS(on) = 8.0mΩ ID = 110A� S D G TO-220AB Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. � Advanced Process Technology � Ultra Low On-Resistance � Dynamic dv/dt Rating � 175°C Operating Temperature � Fast Switching � Fully Avalanche Rated Description Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110 � ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 80 A IDM Pulsed Drain Current � 390 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current� 62 A EAR Repetitive Avalanche Energy� 20 mJ dv/dt Peak Diode Recovery dv/dt � 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) PD-91279E IRF3205 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)� ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 62A, VGS = 0V � trr Reverse Recovery Time ––– 69 104 ns TJ = 25°C, IF = 62A Qrr Reverse Recovery Charge ––– 143 215 nC di/dt = 100A/µs � ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 110 390 A � Starting TJ = 25°C, L = 138µH RG = 25Ω, IAS = 62A. (See Figure 12) � Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: � ISD ≤ 62A, di/dt ≤ 207A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C � Pulse width ≤ 400µs; duty cycle ≤ 2%. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) � Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 8.0 mΩ VGS = 10V, ID = 62A�� VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 44 ––– ––– S VDS = 25V, ID = 62A� ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 146 ID = 62A Qgs Gate-to-Source Charge ––– ––– 35 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 54 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 14 ––– VDD = 28V tr Rise Time ––– 101 ––– ID = 62A td(off) Turn-Off Delay Time ––– 50 ––– RG = 4.5Ω tf Fall Time ––– 65 ––– VGS = 10V, See Fig. 10 � Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 3247 ––– VGS = 0V Coss Output Capacitance ––– 781 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 211 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy� ––– 1050� 264 mJ IAS = 62A, L = 138µH nH LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current � This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C. IRF3205 www.irf.com 3 Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 1 10 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 25 CJ ° � TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , D ra in -to -S ou rc e Cu rre nt (A ) DS D 4.5V 1 10 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 175 CJ ° � TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , D ra in -to -S ou rc e Cu rre nt (A ) DS D 4.5V -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 T , Junction Temperature( C) R , D ra in -to -S ou rc e O n Re sis ta nc e (N orm ali ze d) J D S( on ) ° V = I = GS D 10V 107A 1 10 100 1000 4 6 8 10 12 V = 25V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , D ra in -to -S ou rc e Cu rre nt (A ) GS D T = 25 CJ ° T = 175 CJ ° IRF3205 4 www.irf.com Fig 7. Typical Source-Drain Diode Forward Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1 10 100 VDS, Drain-to-Source Voltage (V) 0 1000 2000 3000 4000 5000 6000 C, C ap ac ita nc e(p F) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 Q , Total Gate Charge (nC) V , G at e- to -S ou rc e Vo lta ge (V ) G G S I =D 62A V = 11VDS V = 27VDS V = 44VDS 1 10 100 1000 10000 1 10 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 175 C = 25 C° °J C V , Drain-to-Source Voltage (V) I , D ra in C ur re nt (A ) I , D ra in C ur re nt (A ) DS D 10us 100us 1ms 10ms 0.1 1 10 100 1000 0.2 0.8 1.4 2.0 2.6 V ,Source-to-Drain Voltage (V) I , R ev er se D ra in C ur re nt (A ) SD SD V = 0 V GS T = 25 CJ ° T = 175 CJ ° IRF3205 www.irf.com 5 RD Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % VGS RG D.U.T. 10V + - 25 50 75 100 125 150 175 0 20 40 60 80 100 120 T , Case Temperature ( C) I , D ra in C ur re nt (A ) °C D LIMITED BY PACKAGE Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % VGS RG D.U.T. 10V VDD 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C � P t t DM 1 2 t , Rectangular Pulse Duration (sec) Th er m al R es po ns e( Z ) 1 th JC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) IRF3205 6 www.irf.com QG QGS QGD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + - 10 V Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V (B R )D S S IA S Fig 12c. Maximum Avalanche Energy Vs. Drain Current R G IA S 0 .01Ωtp D .U .T LV D S + - VD D D R IV E R A 15V 20V 25 50 75 100 125 150 175 0 100 200 300 400 500 Starting T , Junction Temperature ( C) E , Si ng le P ul se A va la nc he E ne rg y (m J) J AS ° � ID TOP BOTTOM 25A 44A 62A IRF3205 www.irf.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W.Period + - + + +- - - Fig 14. For N-Channel HEXFETS * VGS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit � � � RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer � * IRF3205 8 www.irf.com LE A D A S S IG N M E N TS 1 - G A TE 2 - DR A IN 3 - S O U R C E 4 - DR A IN - B - 1 .32 (.052) 1 .22 (.048) 3X 0.55 (.022)0.46 (.018) 2 .92 (.115) 2 .64 (.104) 4 .69 ( .185 ) 4 .20 ( .165 ) 3X 0.93 (.037)0 .69 (.027) 4 .06 (.160) 3 .55 (.140) 1 .15 (.04 5) M IN 6.47 (.255) 6 .10 (.240) 3 .7 8 ( .149 ) 3 .5 4 ( .139 ) - A - 10 .54 (.415) 10 .29 (.405)2 .87 ( .11 3) 2 .62 ( .10 3) 15 .24 ( .60 0) 14 .84 ( .58 4) 14 .09 ( .55 5) 13 .47 ( .53 0) 3X 1 .40 (.0 55)1 .15 (.0 45) 2 .54 (.100) 2 X 0.36 (.014) M B A M 4 1 2 3 N O TE S : 1 D IME N S IO N IN G & TO LE R A N C ING P E R A N S I Y 14.5M , 1 982. 3 O U TLIN E C O N F O R MS TO JE D E C O U T LIN E T O -2 20A B . 2 C O N TR O LLING D IM E N S IO N : INC H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S . Part Marking Information TO-220AB Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) P A R T N U M B E RIN TE R N A T ION A L R E C T IF IE R LO G O E XA M P L E : TH IS IS A N IR F1 0 10 W ITH A S S E M B L Y L O T C O D E 9 B 1M A S S E M B L Y L O T C O D E D A TE C O D E (YYW W ) YY = YE A R W W = W E E K 9 24 6 IR F 10 10 9B 1 M A Data and specifications subject to change without notice. This product has been designed and qualified for the automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/01