TDA2030

TDA2030 14W Hi-Fi AUDIO AMPLIFIER DESCRIPTION The TDA2030 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class AB amplifier. Typically it provides 14W output power (d = 0.5%) at 14V/4Ω; at ± 14V the guaranteed output power is 12W on a 4Ω load and 8W on a 8Ω (DIN45500). TheTDA2030provideshigh outputcurrentand has very low harmonic and cross-over distortion. Further the device incorporates an original (and patented) short circuit protection system compris- ing an arrangement for automatically limiting the dissipated power so as to keep the working point of the output transistors within their safe operating area. A conventional thermal shut-down system is also included. March 1993 Symbol Parameter Value Unit Vs Supply voltage ± 18 V Vi Input voltage Vs Vi Differential input voltage ± 15 V Io Output peak current (internally limited) 3.5 A Ptot Power dissipation at Tcase = 90°C 20 W Tstg, Tj Stoprage and junction temperature -40 to 150 °C ABSOLUTE MAXIMUM RATINGS TYPICAL APPLICATION Pentawatt ORDERING NUMBERS : TDA2030H TDA2030V 1/11 2/11 PIN CONNECTION (top view) TEST CIRCUIT +VS OUTPUT -VS INVERTING INPUT NON INVERTING INPUT TDA2030 Symbol Parameter Test conditions Min. Typ. Max. Unit Vs Supply voltage ± 6 ± 18 V Id Quiescent drain current Vs = ± 18V 40 60 mA Ib Input bias current 0.2 2 µA Vos Input offset voltage ± 2 ± 20 mV Ios Input offset current ± 20 ± 200 nA Po Output power d = 0.5% Gv = 30 dB f = 40 to 15,000 Hz RL = 4Ω RL = 8Ω 12 8 14 9 W W d = 10% f = 1 KHz RL = 4Ω RL = 8Ω Gv = 30 dB 18 11 W W d Distortion Po = 0.1 to 12W RL = 4Ω Gv = 30 dB f = 40 to 15,000 Hz 0.2 0.5 % Po = 0.1 to 8W RL = 8Ω Gv = 30 dB f = 40 to 15,000 Hz 0.1 0.5 % B Power Bandwidth (-3 dB) Gv = 30 dB Po = 12W RL = 4Ω 10 to 140,000 Hz Ri Input resistance (pin 1) 0.5 5 MΩ Gv Voltage gain (open loop) 90 dB Gv Voltage gain (closed loop) f = 1 kHz 29.5 30 30.5 dB eN Input noise voltage B = 22 Hz to 22 KHz 3 10 µV iN Input noise current 80 200 pA SVR Supply voltage rejection RL = 4Ω Gv = 30 dB Rg = 22 kΩ Vripple = 0.5 Veff fripple = 100 Hz 40 50 dB Id Drain current Po = 14W Po = W RL = 4Ω RL = 8Ω 900 500 mA mA Tj Thermal shut-down junction temperature 145 °C ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Vs = ± 14V, Tamb = 25°C unless otherwise specified) Symbol Parameter Value Unit Rth j-case Thermal resistance junction-case max 3 °C/W THERMAL DATA 3/11 TDA2030 4/11 Figure 1. Output power vs. supply voltage Figure 2. Output power vs. supply voltage Figure 3. Distortion vs. output power Figure 4. Distortion vs. output power Figure 5. Distortion vs. output power Figure 6. Distortion vs. frequency Figure 7. Distortion vs. frequency Figure 8. Frequency re- sponse with different values of the rolloff capacitor C8 (see fig. 13) Figure 9. Quiescent current vs. supply voltage TDA2030 Figure 10. Supply voltage rejection vs. voltage gain Figure 11. Power dissipa- tionand efficiencyvs.output power Figure 12. Maximum power dissipation vs. supply volt- age (sine wave operation) APPLICATION INFORMATION Figure 13. Typical amplifier with split power supply Figure 14. P.C. board and component layout for the circuit of fig. 13 (1 : 1 scale) 5/11 TDA2030 6/11 APPLICATION INFORMATION (continued) Figure 15. Typical amplifier with single power supply Figure 16. P.C. board and component layout for the circuit of fig. 15 (1 : 1 scale) Figure 17. Bridge amplifier configuration with split power supply (Po = 28W,Vs = ±14V) TDA2030 PRACTICAL CONSIDERATIONS Printed circuit board The layout shown in Fig. 16 should be adopted by the designers. If different layouts are used, the ground points of input 1 and input 2 must be well decoupled from the ground return of the output in which a high current flows. Assembly suggestion No electrical isolation is needed between the packageandthe heatsinkwith singlesupplyvoltage configuration. Application suggestions The recommended values of the components are those shown on application circuit of fig. 13. Different values can be used. The following table can help the designer. Component Recomm. value Purpose Larger than recommended value Smaller than recommended value R1 22 kΩ Closed loop gain setting Increase of gain Decrease of gain (*) R2 680 Ω Closed loop gain setting Decrease of gain (*) Increase of gain R3 22 kΩ Non inverting input biasing Increase of input impedance Decrease of input impedance R4 1 Ω Frequency stability Danger of osccilat. at high frequencies with induct. loads R5 ≅ 3 R2 Upper frequency cutoff Poor high frequencies attenuation Danger of oscillation C1 1 µF Input DC decoupling Increase of low frequencies cutoff C2 22 µF Inverting DC decoupling Increase of low frequencies cutoff C3, C4 0.1 µF Supply voltage bypass Danger of oscillation C5, C6 100 µF Supply voltage bypass Danger of oscillation C7 0.22 µF Frequency stability Danger of oscillation C8 ≅ 1 2pi B R1 Upper frequency cutoff Smaller bandwidth Larger bandwidth D1, D2 1N4001 To protect the device against output voltage spikes (*) Closed loop gain must be higher than 24dB 7/11 TDA2030 8/11 SHORT CIRCUIT PROTECTION The TDA2030has an originalcircuit which limits the current of the output transistors.Fig. 18 shows that the maximum output current is a function of the collector emitter voltage; hence the output transis- tors work within their safe operating area (Fig. 2). This function can thereforebe considered as being peak power limiting rather than simple current lim- iting. It reduces the possibility that the device gets dam- aged during an accidental short circuit from AC output to ground. Figure 1 8. Maximum output curr ent vs . voltage [VCEsat] across each output transistor Figure 19. Safe operating area and collector characteristics of the protected power transistor THERMAL SHUT-DOWN The presenceof a thermal limiting circuit offers the following advantages: 1. An overload on the output (even if it is perma- nent), or an abovelimit ambient temperaturecan be easily supported since the Tj cannot be higher than 150°C. 2. The heatsinkcan have a smaller factorof safety compared with that of a conventional circuit. There is no possibility of device damage due to high junction temperature.If for any reason, the junction temperature increasesup to 150°C, the thermal shut-down simply reduces the power dissipation at the current consumption. The maximum allowable power dissipation de- pends upon the size of the external heatsink (i.e. its thermal resistance); fig. 22 shows this dissipable power as a function of ambient temperature for different thermal resistance. TDA2030 Figure 20. Output power and dra in current vs. case temperature (RL = 4Ω) Figure 21. Output power and dra in current vs. case temperature (RL = 8Ω) Figure 22. Maximum allowable power dissipation vs. ambient temperature Figure 23. Example of heat-sink Dimension : suggestion. The following table shows the length that the heatsink in fig.23 musthavefor several values of Ptot and Rth. Ptot (W) 12 8 6 Length of heatsink (mm) 60 40 30 Rth of heatsink (° C/W) 4.2 6.2 8.3 9/11 TDA2030 10/11 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 0.055 G 3.4 0.126 0.134 0.142 G1 6.8 0.260 0.268 0.276 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L 17.85 0.703 L1 15.75 0.620 L2 21.4 0.843 L3 22.5 0.886 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 M 4.5 0.177 M1 4 0.157 Dia 3.65 3.85 0.144 0.152 PENTAWATT PACKAGE MECHANICAL DATA L2 L3L5 L7 L6 Dia. A C D E D 1 H 3 H 2 F G G 1 L1 L M M 1 F1 TDA2030 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorizedfor use as critical components in lifesupport devices or systems without express written approval of SGS-THOMSON Microelectronics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 11/11 TDA2030