NEC_2501-1

DESCRIPTION The PS2501A-1 and PS2501AL-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2501A-1 is in a plastic DIP (Dual In-line Package) and the PS2501AL-1 are lead bending type (Gull-wing) for surface mount. FEATURES • High isolation voltage (BV = 5 000 Vr.m.s.) • Ordering number of taping product: PS2501AL-1-E3, E4, F3, F4 • Safety standards • UL approved: File No. E72422 APPLICATIONS • Power supply • Telephone/FAX. • FA/OA equipment • Programmable logic controller DATA SHEET The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. PHOTOCOUPLER PS2501A-1,PS2501AL-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− Document No. PN10221EJ01V0DS (1st edition) Date Published July 2003 CP(K) Printed in Japan  NEC Compound Semiconductor Devices 2003 PACKAGE DIMENSIONS (UNIT : mm) DIP Type PS2501A-1 TOP VIEW 3. 5± 0. 3 4. 15 ±0 .4 3. 2± 0. 4 2.54 1.25±0.15 0.50±0.10 0.25 M 4.6±0.35 6. 5± 0. 5 0 to 15˚ 7.62 0.25+0.1 –0.05 1 2 4 3 1. Anode 2. Cathode 3. Emitter 4. Collector Lead Bending Type PS2501AL-1 TOP VIEW 1. 2. 3. 4. 0.25 M 4.6±0.35 6. 5± 0. 5 3. 5± 0. 3 2.54 1.25±0.15 0.15 0.9±0.25 9.60±0.4 0. 25 + 0. 1 – 0. 05 0. 1+ 0. 1 – 0. 05 1 2 4 3 1. Anode 2. Cathode 3. Emitter 4. Collector Data Sheet PN10221EJ01V0DS 2 PS2501A-1,PS2501AL-1 MARKING EXAMPLE 2501A N 301 E Assembly Lot Week Assembled Year Assembled (Last 1 Digit) In-house Code CTR Rank Code No. 1 pin Mark Package New PKG Made in Japan Made in Taiwan N 3 01 H ORDERING INFORMATION Part Number Package Packing Style Safety Standard Approval Application Part Number*1 PS2501A-1 4-pin DIP Magazine case 100 pcs Standard products PS2501A-1 PS2501AL-1 (UL Approved) PS2501AL-1-E3 Embossed Tape 1 000 pcs/reel PS2501AL-1-E4 PS2501AL-1-F3 Embossed Tape 2 000 pcs/reel PS2501AL-1-F4 *1 For the application of the Safety Standard, following part number should be used. Data Sheet PN10221EJ01V0DS 3 PS2501A-1,PS2501AL-1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Reverse Voltage VR 6 V Forward Current (DC) IF 30 mA Power Dissipation Derating ∆PD/°C 1.5 mW/°C Power Dissipation PD 150 mW Peak Forward Current*1 IFP 0.5 A Transistor Collector to Emitter Voltage VCEO 70 V Emitter to Collector Voltage VECO 5 V Collector Current IC 30 mA Power Dissipation Delay ∆PC/°C 1.5 mW/°C Power Dissipation PC 150 mW Isolation Voltage*2 BV 5 000 Vr.m.s. Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1% *2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output Data Sheet PN10221EJ01V0DS 4 PS2501A-1,PS2501AL-1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Diode Forward Voltage VF IF = 10 mA 1.2 1.4 V Reverse Current IR VR = 5 V 5 µA Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 10 pF Transistor Collector to Emitter Dark Current ICEO VCE = 70 V, IF = 0 mA 100 nA Coupled Current Transfer Ratio (IC/IF)*1 CTR IF = 5 mA, VCE = 5 V 50 400 % Collector Saturation Voltage VCE (sat) IF = 10 mA, IC = 2 mA 0.13 0.3 V Isolation Resistance RI-O VI-O = 1.0 kVDC 1011 Ω Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.4 pF Rise Time*2 tr VCC = 10 V, IC = 2 mA, RL = 100 Ω 5 µs Fall Time*2 tf 7 *1 CTR rank N : 50 to 400 (%) H : 80 to 160 (%) W : 130 to 260 (%) Q : 100 to 200 (%) L : 200 to 400 (%) *2 Test circuit for switching time PW = 100 s Duty Cycle = 1/10 VCC VOUT RL = 100 Ω50 Ω IF Pulse Input µ Data Sheet PN10221EJ01V0DS 5 PS2501A-1,PS2501AL-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) 200 150 100 50 0 25 50 75 100 125 1.5 mW/˚C D io de P ow er D iss ip at io n P D (m W ) Ambient Temperature TA (˚C) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 150 100 50 0 25 50 75 100 125 1.5 mW/˚C Tr an si st or P ow er D is si pa tio n P C (m W ) Ambient Temperature TA (˚C) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 1.51.41.31.21.11.00.90.80.7 50 10 5 1 0.5 0.1 0˚C –25˚C –55˚C +60˚C +25˚C TA = +100˚C Fo rw ar d Cu rre nt I F (m A) Forward Voltage VF (V) FORWARD CURRENT vs. FORWARD VOLTAGE 0.05 Co lle ct or C ur re nt I C (m A) Collector to Emitter Voltage VCE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 10 20 0 2 4 6 8 IF = 1 mA 15 5 10 IF = 2 mA IF = 5 mA IF = 10 mA Co lle ct or to E m itt er D ar k Cu rre nt I CE O (nA ) Ambient Temperature TA (˚C) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 1 10 100 1 000 10 000 0 25 50 75 100 VCE = 70 V VCE = 24 V Collector Saturation Voltage VCE(sat) (V) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE Co lle ct or C ur re nt I C (m A) 0.1 1 10 0 0.2 0.4 0.6 0.8 1.0 IF = 1mA IF = 2mA IF = 5mA IF = 10mA Remark The graphs indicate nominal characteristics. Data Sheet PN10221EJ01V0DS 6 PS2501A-1,PS2501AL-1 Normalized to 1.0 at TA = 25˚C, IF = 5 mA, VCE = 5 V Ambient Temperature TA (˚C) N or m al iz ed C ur re nt T ra ns fe r R at io C TR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE Forward Current IF (mA) Cu rre nt T ra ns fe r R at io C TR (% ) CURRENT TRANSFER RATIO vs. FORWARD CURRENT Frequency f (kHz) N or m al iz ed G ai n G V FREQUENCY RESPONSE TA = 25˚C TA = 60˚C IF = 5 mA (TYP.) 1.2 1.0 0.8 0.6 0.4 0.2 0 102 103 104 105 Time (Hr) CT R (R ela tiv e V alu e) LONG TERM CTR DEGRADATION Load Resistance RL (Ω) Sw itc hi ng T im e t ( s)µ SWITCHING TIME vs. LOAD RESISTANCE Load Resistance RL (kΩ) SWITCHING TIME vs. LOAD RESISTANCE Sw itc hi ng T im e t ( s)µ 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 –50 –25 0 25 50 75 100 CTR:270% CTR:130% 0 50 100 150 200 250 300 0.01 0.1 1 10 100 VCE = 5 V, n = 3 B C Sample A 0.1 1 10 100 10 100 1 000 10 000 tf tr td ts IC = 2 mA, VCC = 10 V, CTR = 216 % 1 10 100 1 000 1 10 100 tr td ts tf IF = 5 mA, VCC = 5 V, CTR = 216 % RL = 1 kΩ 300 Ω 100 Ω IF = 5 mA, VCE = 5 V 5 0 –5 –10 –15 –20 –25 0.1 1 10 100 1 000 Remark The graphs indicate nominal characteristics. Data Sheet PN10221EJ01V0DS 7 PS2501A-1,PS2501AL-1 TAPING SPECIFICATIONS (UNIT : mm) Tape Direction Outline and Dimensions (Tape) Outline and Dimensions (Reel) Packing: 1 000 pcs/reel 2.0±0.5 R 1.0 13.0±0.2φ 21.0±0.8φ PS2501AL-1-E3 PS2501AL-1-E4 1.55±0.1 2.0±0.1 4.0±0.1 1. 75 ±0 .1 4.5 MAX. 4.0±0.1 0.4 5.3±0.1 8.0±0.1 7. 5± 0. 1 16 .0 ±0 .3 10 .3 ±0 .1 1.5 +0.1 –0φ 25 4± 2. 0 80 .0 ±1 .0 2.0±0.5 φ φ 15.9 to 19.4 Outer edge of flange 21.5±1.0 17.5±1.0 Data Sheet PN10221EJ01V0DS 8 PS2501A-1,PS2501AL-1 Tape Direction Outline and Dimensions (Tape) Outline and Dimensions (Reel) PS2501AL-1-F3 PS2501AL-1-F4 1.55±0.1 2.0±0.1 4.0±0.1 1. 75 ±0 .1 4.5 MAX. 4.0±0.1 0.4 5.3±0.1 8.0±0.1 7. 5± 0. 1 16 .0 ±0 .3 10 .3 ±0 .1 1.5 +0.1 –0φ Packing: 2 000 pcs/reel 2.0±0.5 R 1.0 13.0±0.2φ 21.0±0.8φ 33 0± 2. 0 10 0± 1. 0 2.0±0.5 φ φ 15.9 to 19.4 Outer edge of flange 21.5±1.0 17.5±1.0 Data Sheet PN10221EJ01V0DS 9 PS2501A-1,PS2501AL-1 NOTES ON HANDLING (1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) 120±30 s (preheating) 220˚C 180˚C Pa ck ag e Su rfa ce T em pe ra tu re T (˚ C) Time (s) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s to 60 s 260˚C MAX. 120˚C (2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. Data Sheet PN10221EJ01V0DS 10 PS2501A-1,PS2501AL-1 M8E 00. 4 - 0110 The information in this document is current as of July, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). • • • • • • Data Sheet PN10221EJ01V0DS 11 PS2501A-1,PS2501AL-1 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 TEL: +82-2-558-2120 FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0307 NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@csd-nec.com (sales and general) techinfo@csd-nec.com (technical) 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 For further information, please contact PS2501A-1,PS2501AL-1 COVER