2SK2648

2SK2648-01 N-channel MOS-FET FAP-IIS Series 800V 1,5W 9A 150W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (T C=25°C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 800 V Continous Drain Current I D 9 A Pulsed Drain Current I D(puls) 36 A Gate-Source-Voltage V GS ±30 V Repetitive or Non-Repetitive (Tch £ 150°C) I AR 9 A Avalanche Energy E AS 241 mJ Max. Power Dissipation P D 150 W Operating and Storage Temperature Range T ch 150 °C T stg -55 ~ +150 °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage V (BR)DSS ID=1mA VGS=0V 800 V Gate Threshhold Voltage V GS(th) ID=1mA VDS=VGS 3,5 4,0 4,5 V Zero Gate Voltage Drain Current I DSS VDS=800V Tch=25°C 10 500 µA VGS=0V Tch=125°C 0,2 1,0 mA Gate Source Leakage Current I GSS VGS=±30V VDS=0V 10 100 nA Drain Source On-State Resistance R DS(on) ID=4,5A VGS=10V 1,28 1,50 W Forward Transconductance g fs ID=4,5A VDS=25V 6 S Input Capacitance C iss VDS=25V 1200 pF Output Capacitance C oss VGS=0V 180 pF Reverse Transfer Capacitance C rss f=1MHz 90 pF Turn-On-Time ton (ton=td(on)+tr) t d(on) VCC=600V 30 ns t r ID=9A 120 ns Turn-Off-Time toff (ton=td(off)+tf) t d(off) VGS=10V 95 ns t f RGS=10 W 60 ns Avalanche Capability I AV L = 100µH Tch=25°C 9 A Diode Forward On-Voltage V SD IF=2xIDR VGS=0V Tch=25°C 1,0 V Reverse Recovery Time t rr IF=IDR VGS=0V 900 ns Reverse Recovery Charge Q rr -dIF/dt=100A/µs T ch=25°C 12 µC - Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-a) channel to air 35 °C/W R th(ch-c) channel to case 0,83 °C/W Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 N-channel MOS-FET 2SK2648-01 800V 1,5W 9A 150W FAP-IIS Series > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics ­ ID=f(VDS); 80µs pulse test; TC=25°C ­ RDS(on) = f(Tch); ID=4,5A; VGS=10V ­ ID=f(VGS); 80µs pulse test;VDS=25V; Tch=25°C I D [ A ] 1 R D S (O N ) [ W ] 2 I D [ A ] 3 VDS [V] ® Tch [°C] ® VGS [V] ® Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch ­ RDS(on)=f(ID); 80µs pulse test; TC=25°C ­ gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C ­ VGS(th)=f(Tch); ID=1mA; VDS=VGS R D S (O N ) [ W ] 4 g f s [ S ] 5 V G S (t h ) [ V ] 6 ID [A] ® ID [A] ® Tch [°C] ® Typical Capacitances vs. VDS Avalanche Energy Derating Forward Characteristics of Reverse Diode ­ C=f(VDS); VGS=0V; f=1MHz ­ Eas=f(starting Tch); VCC=80V; IAV=9A ­ IF=f(VSD); 80µs pulse test; VGS=0V C [ F] 7 E a s [m J] 8 I F [ A ] 9 VDS [V] ® Starting Tch [°C] ® VSD [V] ® Allowable Power Dissipation vs. TC Safe operation area PD=f(Tc) ID=f(VDS): D=0,01, Tc=25°C ­ Z th (c h -c ) [ K /W ] Transient Thermal impedance ­ 10 ­ 12 Zthch=f(t) parameter:D=t/T P D [ W ] I D [ A ] Tc [°C] ® VDS [V] ® t [s]® This specification is subject to change without notice!