CD4070

TL/F/5976 C D 4 0 7 0 B M / C D 4 0 7 0 B C / C D 4 0 7 7 B M / C D 4 0 7 7 B C March 1992 CD4070BM/CD4070BC Quad 2-Input EXCLUSIVE-OR Gate CD4077BM/CD4077BC Quad 2-Input EXCLUSIVE-NOR Gate General Description Employing complementary MOS (CMOS) transistors to achieve wide power supply operating range, low power con- sumption, and high noise margin, the CD4070BM/BC and CD4077BM/BC provide basic functions used in the imple- mentation of digital integrated circuit systems. The N- and P-channel enhancement mode transistors provide a sym- metrical circuit with output swing essentially equal to the supply voltage. No DC power other than that caused by leakage current is consumed during static condition. All in- puts are protected from damage due to static discharge by diode clamps to VDD and VSS. Features Y Wide supply voltage range 3.0V to 15V Y High noise immunity 0.45 VDD typ. Y Low power TTL Fan out of 2 driving 74L compatibility or 1 driving 74LS Y CD4070BÐPin compatible to CD4030A ÐEquivalent to MM54C86/MM74C86 and MC14070B Y CD4077BÐEquivalent to MC14077B Connection Diagram CD4070BM/CD4070BC Dual-In-Line Package TL/F/5976–1 Top View CD4077BM/CD4077BC Dual-In-Line Package TL/F/5976–5 Top View Typical Performance Characteristics Truth Tables Propagation Delay Time vs Load Capacitance TL/F/5976–2 CD4070BM/CD4070BC Inputs Outputs A B Y L L L L H H H L H H H L CD4077BM/CD4077BC Inputs Outputs A B Y L L H L H L H L L H H H C1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A. Absolute Maximum Ratings (Notes 1 and 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. DC Supply Voltage (VDD) b0.5 to a18 VDC Input Voltage (VIN) b0.5 to VDD a0.5 VDC Storage Temperature Range (TS) b65§C to a150§C Power Dissipation (PD) Dual-In-Line 700 mW Small Outline 500 mW Lead Temperature (TL) (Soldering, 10 seconds) 260§C Recommended Operating Conditions (Note 2) DC Supply Voltage (VDD) 3V to 15 VDC Input Voltage (VIN) 0 to VDD VDC Operating Temperature Range (TA) CD4070BC/CD4077BC b40§C to a85§C CD4070BM/CD4077BM b55§C to a125§C DC Electrical Characteristics CD4070BM/CD4077BM (Note 2) Symbol Parameter Conditions b55§C a25§C a125§C Units Min Max Min Typ Max Min Max IDD Quiescent Device VDD e 5V, 0.25 0.25 7.5 mA Current VIN e VDD or VSS VDD e 10V, 0.5 0.5 15 mA VIN e VDD or VSS VDD e 15V, 1.0 1.0 30 mA VIN e VDD or VSS VOL Low Level lIOl k 1 mA Output Voltage VDD e 5V 0.05 0 0.05 0.05 V VDD e 10V 0.05 0 0.05 0.05 V VDD e 15V 0.05 0 0.05 0.05 V VOH High Level lIOl k 1 mA Output Voltage VDD e 5V 4.95 4.95 5 4.95 V VDD e 10V 9.95 9.95 10 9.95 V VDD e 15V 14.95 14.95 15 14.95 V VIL Low Level lIOl k 1 mA Input Voltage VDD e 5V, VO e 4.5V or 0.5V 1.5 1.5 1.5 V VDD e 10V, VO e 9V or 1.0V 3.0 3.0 3.0 V VDD e 15V, VO e 13.5V or 1.5V 4.0 4.0 4.0 V VIH High Level lIOl k 1 mA Input Voltage VDD e 5V, VO e 0.5V or 4.5V 3.5 3.5 3.5 V VDD e 10V, VO e 1.0V or 9.0V 7.0 7.0 7.0 V VDD e 15V, VO e 1.5V or 13.5V 11.0 11.0 11.0 V IOL Low Level Output VDD e 5V, VO e 0.4V 0.64 0.51 0.88 0.36 mA Current (Note 3) VDD e 10V, VO e 0.5V 1.6 1.3 2.25 0.9 mA VDD e 15V, VO e 1.5V 4.2 3.4 8.8 2.4 mA IOH High Level Output VDD e 5V, VO e 4.6V b0.64 b0.51 b0.88 b0.36 mA Current (Note 3) VDD e 10V, VO e 9.5V b1.6 b1.3 b2.25 b0.9 mA VDD e 15V, VO e 13.5V b4.2 b3.4 b8.8 b2.4 mA IIN Input Current VDD e 15V, VIN e 0V b0.1 b10b5 b0.1 b1.0 mA VDD e 15V, VIN e 15V 0.1 10b5 0.1 1.0 mA Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The table of ‘‘Recommended Operating Conditions’’ and ‘‘Electrical Characteristics’’ provides conditions for actual device operation. Note 2: VSS e 0V unless otherwise specified. Note 3: IOL and IOH are tested one output at a time. 2 DC Electrical Characteristics CD4070BC/CD4077BC (Note 2) Symbol Parameter Conditions b40§C a25§C a85§C Units Min Max Min Typ Max Min Max IDD Quiescent Device VDD e 5V, 1.0 1.0 7.5 mA Current VIN e VDD or VSS VDD e 10V, 2.0 2.0 15 mA VIN e VDD or VSS VDD e 15V, 4.0 4.0 30 mA VIN e VDD or VSS VOL Low Level lIOl k 1 mA Output Voltage VDD e 5V 0.05 0 0.05 0.05 V VDD e 10V 0.05 0 0.05 0.05 V VDD e 15V 0.05 0 0.05 0.05 V VOH High Level lIOl k 1 mA Output Voltage VDD e 5V 4.95 4.95 5 4.95 V VDD e 10V 9.95 9.95 10 9.95 V VDD e 15V 14.95 14.95 15 14.95 V VIL Low Level lIOl k 1 mA Input Voltage VDD e 5V, VO e 4.5V or 0.5V 1.5 1.5 1.5 V VDD e 10V, VO e 9V or 1.0V 3.0 3.0 3.0 V VDD e 15V, VO e 13.5V or 1.5V 4.0 4.0 4.0 V VIH High Level lIOl k 1 mA Input Voltage VDD e 5V, VO e 0.5V or 4.5V 3.5 3.5 3.5 V VDD e 10V, VO e 1V or 9.0V 7.0 7.0 7.0 V VDD e 15V, VO e 1.5V or 13.5V 11.0 11.0 11.0 V IOL Low Level Output VDD e 5V, VO e 0.4V 0.52 0.44 0.88 0.36 mA Current VDD e 10V, VO e 0.5V 1.3 1.1 2.25 0.9 mA VDD e 15V, VO e 1.5V 3.6 3.0 8.8 2.4 mA IOH High Level Output VDD e 5V, VO e 4.6V b0.52 b0.44 b0.88 b0.36 mA Current VDD e 10V, VO e 9.5V b1.3 b1.1 b2.25 b0.9 mA VDD e 15V, VO e 13.5V b3.6 b3.0 b8.8 b2.4 mA IIN Input Current VDD e 15V, VIN e 0V b0.3 b10b5 b0.3 b1.0 mA VDD e 15V, VIN e 15V 0.3 10b5 0.3 1.0 mA AC Electrical Characteristics* TA e 25§C, CL e 50 pF, RL e 200k, tr and tf s 20 ns, unless otherwise specified Symbol Parameter Conditions Min Typ Max Units tPHL or Propagation Delay Time VDD e 5V 110 185 ns tPLH from Input to Output VDD e 10V 50 90 ns VDD e 15V 40 75 ns tTHL or Transition Time VDD e 5V 100 200 ns tTLH VDD e 10V 50 100 ns VDD e 15V 40 80 ns CIN Average Input Capacitance Any Input 5 7.5 pF CPD Power Dissipation Capacitance Any Input (Note 4) 20 pF *AC Parameters are guaranteed by DC correlated testing. Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The table of ‘‘Recommended Operating Conditions’’ and ‘‘Electrical Characteristics’’ provides conditions for actual device operation. Note 2: VSS e 0V unless otherwise specified. Note 3: IOL and IOH are tested one output at a time. Note 4: CPD determines the no load AC power consumption of any CMOS device. For complete explanation, see 54C/74C Family Characteristics Application NoteÐAN-90. 3 AC Test Circuit and Switching Time Waveforms TL/F/5976–3 Note: Delays measured with input tr, tf e 20 ns. TL/F/5976–4 tr e tf e 20 ns 4 Physical Dimensions inches (millimeters) Molded Small Outline Package (M) Order Number CD4070BCM or CD4077BCM NS Package Number M14A 5 C D 4 0 7 0 B M / C D 4 0 7 0 B C / C D 4 0 7 7 B M / C D 4 0 7 7 B C Physical Dimensions inches (millimeters) (Continued) Molded Dual-In-Line Package (N) Order Number CD4070BCN or CD4077BCN NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd. 1111 West Bardin Road Fax: (a49) 0-180-530 85 86 13th Floor, Straight Block, Tel: 81-043-299-2309 Arlington, TX 76017 Email: cnjwge@ tevm2.nsc.com Ocean Centre, 5 Canton Rd. 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