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1MB05-120

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1MB05-120 1MB05-120,1MB05D-120, Molded IGBT 1200V / 5A Molded Package Features · Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up Applications · ...

1MB05-120
1MB05-120,1MB05D-120, Molded IGBT 1200V / 5A Molded Package Features · Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Symbol Collector-Emitter voltage VCES Gate-Emitter voltaga VGES Collector DC Tc=25°C IC25 current Tc=100°C IC100 1ms Tc=25°C Icp Max. power dissipation(IGBT) PC Operating temperature Tj Storage temperature Tstg Screw torque - Rating 1200 ±20 9 5 27 100 +150 -40 to +150 50 Unit V V A A A W °C °C N·cm Equivalent Circuit Schematic Item Symbol Collector-Emitter voltage VCES Gate-Emitter voltaga VGES Collector DC Tc=25°C IC25 current Tc=100°C IC100 1ms Tc=25°C Icp Max. power dissipation (IGBT) PC Max. power dissipation (FWD) PC Operating temperature Tj Storage temperature Tstg Screw torque - Rating 1200 ±20 9 5 27 100 60 +150 -40 to +150 50 Unit V V A A A W W °C °C N·cm 1MB05-120 / IGBT 1MB05D-120 / IGBT+FWD C:Collector E:Emitter G:Gate IGBT C:Collector E:Emitter G:Gate IGBT + FWD I tem Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf – – 1.0 – – 20 5.5 – 8.5 – – 3.5 – 650 – – 150 – – 40 – – – 1.2 – – 0.6 – – 1.5 – – 0.5 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=5mA VGE=15V, IC=5A VGE=0V VCE=10V f=1MHz VCC=600V IC=5A VGE=±15V RG=330 ohm (Half Bridge) mA µA V V pF µs Electrical characteristics (at Tj=25°C unless otherwise specified) Thermal resistance characteristics Thermal resistance – – 1.25 – – 2.08 IGBT FWD °C/W °C/W Item Symbol Characteristics Conditions Unit Min. Typ. Max. Rth(j-c) Rth(j-c) Symbol Characteristics Conditions Unit Min. Typ. Max. Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time FWD forward on voltage Reverse recovery time ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr – – 1.0 – – 20 5.5 – 8.5 – – 3.5 – 650 – – 150 – – 40 – – – 1.2 – – 0.6 – – 1.5 – – 0.5 – – 3.0 – – 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=5mA VGE=15V, IC=5A VGE=0V VCE=10V f=1MHz VCC=600V, IC=5A VGE=±15V RG=330 ohm (Half Bridge) IF=5A, VGE=0V IF=5A, VGE=-10V, di/dt=100A/µs mA µA V V pF µs V µs Symbol Characteristics Conditions Unit Min. Typ. Max. 1MB05-120, 1MB05D-120 Molded IGBT 1MB05-120 / IGBT 1MB05D-120 / IGBT+FWD Thermal resistance – – 1.25 IGBT °C/W Item Symbol Characteristics Conditions Unit Min. Typ. Max. Rth(j-c) 1MB05-120 / IGBT 1MB05D-120 / IGBT+FWD Outline drawings, mm 1MB05-120, 1MB05D-120 TO-3P Characteristics 1MB05-120,1MB05D-120 1MB05-120, 1MB05D-120 Molded IGBT Collector current vs. Collector-Emitter voltage Tj=25°C Collector current vs. Collector-Emitter voltage Tj=125°C Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C Switching time vs. Collector current Vcc=600V, RG=330 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=600V, RG=330 ohm, VGE=±15V, Tj=125°C Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] C ol le ct or c ur re nt : I c [A ] C ol le ct or c ur re nt : I c [A ] 0 1 2 3 4 5 C ol le ct or -E m itt er v ol ta ge : V C E [V ] C ol le ct or -E m itt er v ol ta ge : V C E [V ] 0 5 10 15 20 Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V] Sw itc hi ng t im e : to n, t r, to ff, t f [n s ec .] 100 10 Collector current : Ic [A] Collector current : Ic [A] Sw itc hi ng t im e : to n, t r, to ff, t f [n s ec .] 0 2 4 6 8 10 10 8 6 4 2 0 10 8 6 4 2 0 1000 10 8 6 4 2 0 100 1000 0 1 2 3 4 5 0 5 10 15 20 10 8 6 4 2 0 0 2 4 6 8 10 Collector-Emitter voltage : VCE [V] 10 C ap ac ita nc e : C ie s, C oe s, C re s [n F] Capacitance vs. Collector-Emitter voltage Tj=25°C 0 5 10 15 20 25 30 35 100 IGBT Module Switching time vs. RG Vcc=600V, Ic=5A, VGE=±15V, Tj=25°C Dynamic input characteristics Tj=25°C Gate resistance : RG [ohm] Gate charge : Qg [nC] 100 1000 Sw itc hi ng t im e : to n, tr , t of f, tf [n s ec .] C ol le ct or -E m itt er v ol ta ge : VC E [ V] G at e- Em itt er v ol ta ge : V G E [ V] 10 8 6 4 2 0 0 200 400 600 800 1000 1200 Collector-Emitter voltage : VCE [V] C ol le ct or c ur re nt : Ic [A ] 0 20 40 60 80 100 25 20 15 10 5 0 1000 800 600 400 200 0 Switching time vs. RG Vcc=600V, Ic=5A, VGE=±15V, Tj=125°C Gate resistance : RG [ohm] 100 1000 100 Sw itc hi ng t im e : to n, tr , t of f, tf [n s ec .] Reversed biased safe operating area +VGE=15V, -VGE = 15V, Tj = 125°C, RG = 330 ohm< < > Typical short circuit capability Vcc=800V, RG=330 ohm, Tj=125°C Sh or t c irc ui t t im e : t sc [µ s] 1000 400 30 200 100 0 5 10 15 20 25 80 60 40 20 0 Sh or t c irc ui t t im e cu rre nt : Is c [A ] Characteristics 1MB05-120,1MB05D-120 1MB05-120, 1MB05D-120 Gate voltage : VGE [V] 100 1000 1000 1 IGBT Module 10-4 10-3 10-2 10-1 100 Pulse width : PW [sec.] Th er m al r es is ta nc e : R th (j -c ) [° C /W ] Transient thermal resistance Characteristics 1MB05-120,1MB05D-120 1MB05D-120 Reverse recovery time vs. Forward current -di/dt=15A / µsec Reverse recovery current vs. Forward current -di/dt=15A / µsec re ve rs e re co ve ry ti m e : t rr [n se c] re ve rs e re co ve ry c ur re nt : Irr [ A] 800 600 400 200 0 5 4 3 2 1 0 0 2 4 6 8 Forward current : IF [A] Forward current : IF [A] 0 1.0 2.0 3.0 4.0 0 10 20 30 40 50 60 70 Forward voltage : VF [V] Fo rw ar d cu rre nt : IF [ A] re ve rs e re co ve ry ti m e : t rr [n se c] -di/dt [ A / µsec ] Forward current vs. Foeward voltage Reverse recovery time characteristics vs. -di/dt IF=5A, Tj=125°C 8 6 4 2 0 re ve rs e re co ve ry c ur re nt : Irr [ A] 100 10-1 10-2 101 10 8 6 4 2 0 800 600 400 200 0 1MB05-120, 1MB05D-120 0 2 4 6 8
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