56
CentralCentralCentralCentralCentral
Semiconductor Corp.Semiconductor Corp.Semiconductor Corp.Semiconductor Corp.Semiconductor Corp.
TM
SOT-23 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N7002
type is a N-Channel Field Effect Transistor,
manufactured by the N-Channel DMOS
Process, designed for high speed pulsed
amplifier and driver applications.
Marking Code is 702.
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Drain-Source Voltage VDS 60 V
Drain-Gate Voltage VDG 60 V
Gate-Source Voltage VGS 40 V
Continuous Drain Current (TC=25oC) ID 115 mA
Continuous Drain Current (TC=100oC) ID 75 mA
Continuous Source Current (Body Diode) IS 115 mA
Maximum Pulsed Drain Current IDM 800 mA
Maximum Pulsed Source Current ISM 800 mA
Power Dissipation PD 350 mW
Operating and Storage
Junction Temperature TJ,Tstg -55 to +150 oC
Thermal Resistance ΘJA 357 oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IGSSF VGS=20V 100 nA
IGSSR VGS=-20V -100 nA
IDSS VDS=60V, VGS=0 1.0 µA
IDSS VDS=60V, VGS=0, TA=125oC 500 µA
ID(ON) VDS ≥ 2VDS(ON), VGS=10V 500 mA
BVDSS ID=10µA 60 105 V
VGS(th) VDS=VGS, ID=250µA 1.0 2.1 2.5 V
VDS(ON) VGS=10V, ID=500mA 3.75 V
VDS(ON) VGS=5.0V, ID=50mA 1.5 V
rDS(ON) VGS=10V, ID=500mA 3.7 7.5 Ω
2N7002
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
R2
57
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
rDS(ON) VGS=10V, ID=500mA, TA=100oC 13.5 Ω
rDS(ON) VGS=5.0V, ID=50mA 6.2 7.5 Ω
rDS(ON) VGS=5.0V, ID=50mA, TA=100oC 13.5 Ω
gFS VDS ≥ 2VDS(ON), ID=200mA 80 mmhos
Crss VDS=25V, VGS=0, f=1.0MHz 5.0 pF
Ciss VDS=25V, VGS=0, f=1.0MHz 50 pF
Coss VDS=25V, VGS=0, f=1.0MHz 25 pF
ton VDD=30V, ID=10V, RG=25Ω, RL=25Ω 20 ns
toff VDD=30V, ID=10V, RG=25Ω, RL=25Ω 20 ns
VSD VGS=0V, IS=11.5mA -1.5 V
All dimensions in inches (mm).
LEAD CODE:
1) GATE
2) SOURCE
3) DRAIN
R1
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