irf630

August 2006 Rev 9 1/14 14 IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET General features ■ Extremely high dv/dt capability ■ Very low intrinsic capacitances ■ Gate charge minimized Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Applications ■ Switching application Internal schematic diagram Type VDSS RDS(on) ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A TO-220 TO-220FP 1 2 3 1 2 3 www.st.com Order codes Part number Marking Package Packaging IRF630 IRF630 TO-220 Tube IRF630FP IRF630FP TO-220FP Tube Contents IRF630 - IRF630FP 2/14 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 IRF630 - IRF630FP Electrical ratings 3/14 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220 TO-220FP VDS Drain-source voltage (VGS = 0) 200 V VDGR Drain-gate voltage (RGS = 20 kΩ) 200 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 9 9(1) 1. Limited only by maximum temperature allowed A ID Drain current (continuous) at TC=100°C 5.7 5.7(1) A IDM(2) 2. Pulse width limited by safe operating area Drain current (pulsed) 36 36(1) A PTOT Total dissipation at TC = 25°C 75 30 W Derating factor 0.6 0.24 W/°C dv/dt (3) 3. ISD ≤9A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Peak diode recovery voltage slope 5 V/ns VISO Insulation winthstand voltage (DC) -- 2000 V TJ Tstg Operating junction temperature Storage temperature -65 to 150 150 °C Table 2. Thermal data Symbol Parameter Value Unit TO-220 TO-220FP Rthj-case Thermal resistance junction-case Max 1.67 4.17 °C/W Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W Rthc-sink Thermal resistance case-sink typ 0.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 9 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 160 mJ Electrical characteristics IRF630 - IRF630FP 4/14 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 200 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125°C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 2 3 4 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 4.5A 0.35 0.40 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS > ID(on) x RDS(on)max, ID = 4.5A 3 4 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 540 90 35 700 120 50 pF pF pF td(on) tr Turn-on Delay Time Rise Time VDD = 100V, ID = 4.5A, RG = 4.7Ω, VGS = 10V (see Figure 14) 10 15 14 20 ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=160V, ID = 9A VGS =10V 31 7.5 9 45 nC nC nC IRF630 - IRF630FP Electrical characteristics 5/14 Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 9 A ISDM(1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 36 A VSD(2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=9A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=9A, di/dt = 100A/µs, VDD=50V, Tj=150°C (see Figure 16) 170 0.95 11 ns µC A Electrical characteristics IRF630 - IRF630FP 6/14 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220/FP Figure 4. Thermal impedance for TO-220/FP Figure 5. Output characterisics Figure 6. Transfer characteristics IRF630 - IRF630FP Electrical characteristics 7/14 Figure 7. Transconductance Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature Electrical characteristics IRF630 - IRF630FP 8/14 Figure 13. Source-drain diode forward characteristics IRF630 - IRF630FP Test circuit 9/14 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped Inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform Package mechanical data IRF630 - IRF630FP 10/14 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com IRF630 - IRF630FP Package mechanical data 11/14 DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA Package mechanical data IRF630 - IRF630FP 12/14 L2 A B D E H G L6 F L3 G 1 1 2 3 F 2 F 1 L7 L4 L5 DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 TO-220FP MECHANICAL DATA IRF630 - IRF630FP Revision history 13/14 5 Revision history Table 7. Revision history Date Revision Changes 09-Sep-2004 8 Complete version 03-Aug-2006 9 New template, no content change IRF630 - IRF630FP 14/14 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. 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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Table 2. Thermal data Table 3. Avalanche characteristics 2 Electrical characteristics Table 4. On/off states Table 5. Dynamic Table 6. Source drain diode 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220/FP Figure 4. Thermal impedance for TO-220/FP Figure 5. Output characterisics Figure 6. Transfer characteristics Figure 7. Transconductance Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature Figure 13. Source-drain diode forward characteristics 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped Inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 4 Package mechanical data 5 Revision history Table 7. 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