IRF530

IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR n TYPICAL RDS(on) = 0.12 Ω n AVALANCHERUGGED TECHNOLOGY n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100oC n LOW GATE CHARGE n HIGH CURRENT CAPABILITY n 175oC OPERATING TEMPERATURE n APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n DC-DC & DC-AC CONVERTER n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.) INTERNAL SCHEMATIC DIAGRAM March 1998 TO-220 TO-220FI 1 2 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF530 IRF530FI VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS = 20 kΩ) 100 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC 16 11 A ID Drain Current (continuous) at Tc = 100 oC 11 7.8 A IDM(•) Drain Current (pulsed) 64 64 A Ptot Total Dissipation at Tc = 25 oC 90 40 W Derating Factor 0.6 0.27 W/oC Viso Insulat ion Withstand Voltage (DC) - 2000 V Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC (•) Pulse width limited by safe operating area (1) ISD ≤11 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX TYPE VDSS RDS(on) ID IRF530 IRF530FI 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A 1/6 THERMAL DATA TO-220 TO220-FI Rthj-ca se Thermal Resistance Junction-case Max 1 3.75 oC/W Rthj- amb Rthc-si nk Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repet itive (pulse width limited by Tj max, δ < 1%) 16 A EAS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR, VDD = 50 V) 100 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 900 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating Tc = 125 oC 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 2 3 4 V RDS(on) Static Drain-source On Resistance VGS = 10V ID = 8 A 0.12 0.16 Ω ID(o n) On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V 16 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward Transconductance VDS > ID(on) x RDS(on)max ID = 8 A 5 8 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V f = 1 MHz VGS = 0 950 150 50 1300 270 70 pF pF pF IRF530/IRF530FI 2/6 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD = 50 V ID = 8 A RG = 4.7 Ω VGS = 10 V 12 20 16 28 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =80 V ID =16 A VGS = 10 V 32 9 13 44 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Vof f) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 80 V ID =16 A RG = 4.7 Ω VGS = 10 V 11 12 25 15 17 35 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM(•) Source-drain Current Source-drain Current (pulsed) 16 64 A A VSD (∗) Forward On Voltage ISD = 16 A VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =16 A di/dt = 100 A/µs VDD = 30 V Tj = 150 oC 150 0.8 10 ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area IRF530/IRF530FI 3/6 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 L6 A C D E D 1 F G L7 L2 Dia. F1 L5 L4 H 2 L9 F2 G 1 TO-220 MECHANICAL DATA P011C IRF530/IRF530FI 4/6 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 L2 A B D E H G L6 ¯ F L3 G 1 1 2 3 F2 F1 L7 L4 ISOWATT220 MECHANICAL DATA P011G IRF530/IRF530FI 5/6 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . . . IRF530/IRF530FI 6/6